PECVD-8-16 Batch Wafer PECVD Pilot System
A capacitively coupled plasma deposition system uses a multi-slot graphite boat to process up to twelve 6-inch wafers in one heated quartz-tube batch.
- Final configuration confirmed before quotation
- Customization and accessories reviewed by application
- Export packing and documentation available on request
Technical specifications
Specifications are organized by system so different equipment types can present the parameters that matter for their application.
Key specifications
| Wafer capacity | 12 x 6 in wafers |
|---|---|
| Working temperature | 400–1100 °C |
| Heating zones | 3 x 300 mm; uniform zone 600 mm (±2 °C) |
| RF plasma source | 20–1000 W; 13.56 MHz |
| Gas control | 4 MFC channels; ±1.5% FS |
Specifications may change with configuration and customization. Final data is subject to the confirmed quotation.
Product description
A compatible vacuum pump is required and is specified separately.
Confirm precursor or sample compatibility, tube and flange configuration, gases, pumping, cooling, exhaust and electrical supply with LabSova before ordering. Images may show optional accessories; the agreed configuration defines supply. Temperature ratings do not imply that every vacuum or pressure condition is permitted at that temperature.
For international buyers, quotation confirmation can include configuration, accessories, packing method, export documents, inspection photos or videos and shipping terms.