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Chemical Vapor Deposition (CVD)

MIST-1600-6 Induction-Heated Mist LPCVD Reactor

ModelMIST-1600-6

A quartz-chamber deposition reactor with an induction-heated graphite stage for high-temperature thin-film growth on wafers up to 6 inches.

Operating temperature 1500 °C working; 1600 °C for <1 h
Wafer capacity Up to 6 in
Quartz chamber 216 mm OD x 500 mm H
  • Final configuration confirmed before quotation
  • Customization and accessories reviewed by application
  • Export packing and documentation available on request
Technical data

Technical specifications

Specifications are organized by system so different equipment types can present the parameters that matter for their application.

Key specifications

Operating temperature 1500 °C working; 1600 °C for <1 h
Wafer capacity Up to 6 in
Quartz chamber 216 mm OD x 500 mm H
Induction supply 15 kW; 30–100 kHz
Heated precursor vessel 100 mL; up to 150 °C

Specifications may change with configuration and customization. Final data is subject to the confirmed quotation.

Product description

Confirm precursor or sample compatibility, tube and flange configuration, gases, pumping, cooling, exhaust and electrical supply with LabSova before ordering. Images may show optional accessories; the agreed configuration defines supply. Temperature ratings do not imply that every vacuum or pressure condition is permitted at that temperature.